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  ZHANG Shuming  张书明
  Division of Nano-devices & Materials
  GaN MOCVD growth; GaN devices processing

Research Interest:
1. GaN-based blue laser diode;

2. GaN-based blue LED;

3. New-type semiconductors materials and devices.


Ded. 2010 - Present 


Nano-Devices and Materials Division, SINANO, CAS 

Jan.1999 Nov. 2010


Institute of Semiconductors, CAS


Ph.D. 1996 

OPto-electrics of Semiconductors

Xi'an Institute of Optics and Precision Mechanics, CAS,

M.S. 1991

Materials and Devices of Semiconductors

Northwest University(China)

B.S. 1988 

Materials and Devices of Semiconductors 

Northwest University(China)

Selected Publication:
  1. Wang LJ, Zhang SM, Zhu JH, Zhu JJ, Zhao DG, Liu ZS, Jiang DS, Wang YT, Yang H, “Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices”, Chin. Phys. B, 19, 017307 (2010)
  2. Zeng C, Zhang SM, Ji L, Wang HB, Zhao DG, Zhu JJ, Liu ZS, Jiang DS, Cao Q, Chong M, Duan LH, Wang H, Shi YS, Liu SY, Yang H, Chen LH, “Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours”, CHINESE PHYSICS LETTERS, 27, 114215 (2010) 
  3. Ji L, Zhang SM, Jiang DS, Liu ZS, Zhang LQ, Zhu JJ, Zhao DG, Duan LH, Yang H, “Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure”, CHINESE PHYSICS LETTERS, 27, 054204(2010) 
  4. J. H. Zhu, L. J. Wang, S. M. Zhang, H. Wang, D. G. Zhao, J. J. Zhu, Z. S. Liu, D. S. Jiang, and H. Yang, “The fabrication of GaN-based nanopillar light-emitting diodes”, Journal of Applied Physics, 108, 074302 (2010)
  5. L. Ji, D. S. Jiang, S. M. Zhang, Z. S. Liu, C. Zeng, D. G. Zhao, J. J. Zhu, H. Wang, L. H. Duan, H. Yang, “Time delay in InGaN multiple quantum well laser diodes at room temperature”, Chin. Phys. B, 19, 124211 (2010)
  6. L. Q. Zhang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, Y. T. Wang, S. M. Zhang, and H. Yang, “Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green”, Journal of Applied Physics, 105, 023104 (2009)
  7. L. J. Wang, S. M. Zhang, Y. T. Wang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, H. Wang, Y. S. Shi, H. Wang, S. Y. Liu, and H. Yang, “Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films” CHINESE PHYSICS LETTERS, 26, 076104 (2009)
  8. J H Zhu, L J Wang, S M Zhang, H Wang, D G Zhao, J J Zhu, Z S Liu, D S Jiang, Y X Qiu and H Yang,” The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers” J. Phys. D: Appl. Phys. 42 (2009) 235104
  9. Zhang Li-Qun, Zhang Shu-Ming, Jiang De-sheng, Wang Hui, Zhu Jian-jun, Zhao De-Gang, Liu Zong-Shun and Yang Hui, “GaN-based violet laser diodes grown on free-standing GaN substrate”, Chin. Phys. B, 18, 5350 (2009)
  10. Zhu, JH; Zhang, SM; Sun, X; Zhao, DG; Zhu, JJ; Liu, ZS; Jiang, DS; Duan, LH; Wang, H; Shi, YS; Liu, SY; Yang, H “Fabrication and optical characterization of GaN-based nanopillar light emitting diodes” CHINESE PHYSICS LETTERS, 25 (9): 3485-3488 SEP 2008
  11. ZHANG Li-Qun, ZHANG Shu-Ming, YANG Hui CAO Qing, JI Lian, ZHU Jian-Jun, LIU Zong-Shun, ZHAO De-GangJIANG De-Sheng, DUAN Li-Hong, WANG Hai, SHI Yong-Sheng, LIU Su-Ying, CHEN Liang-Hui, LIANG Jun-Wu “Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature  CHIN.PHYS.LETT. V 25, 1281, 2008
  12. Zhao De-sheng, Zhang Shu-ming, Duan li-hong, Wang yu-tian, Jiang De-sheng, Liu Wen-bao, Zhang Bao-Shun, Yang Hui. “Effect of Ag on Electrical Properties of Ag/Ni/P-GaN  Ohmic Contact”  Chinese Physics Letter Vol.24.No.6(2007)1741
  13. D. Y. Li, Y. Z. Huang, J. J. Zhu, D. G. Zhao, Z. S. Liu, S. M. Zhang, X. J. Ye, M. Chong, L. H. Chen, H. Yang, and J. W. Liang, “Thermal Lensing Effect in Ridge Structure InGaN Multiple Quantum Well Laser Diodes”, J. Appl. Phys. 100, 046101 (2006).
  14. Li Deyao, Zhang Shuming, Wang Jianfeng1, Chen Jun, Chen Lianghui, Chong Ming, Zhu Jianjun, Zhao Degang, Liu Zongshun, Yang Hui, Liang Junwu, “Characteristics of the InGaN multiple quantum well blue-violet laser diodes”, Science in China.series E: 2006 vo.l49 No.6 727-732