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  Location: Home > Faculty
Name:  
  ZHANG Jicai  张纪才
Department:  
  Platform for Characterization & Test
Position:  
  Professor
Expertise:  
  MOCVD growth of GaN; HVPE growth of free standing GaN substrate; Fabrication and characterization of deep UV LEDs.
Email:  
  jczhang2010@sinano.ac.cn

Research Interest:
1. HVPE growth of free standing GaN and AlN substrate;

2. Group-III nitrides based optoelectronic devices;

 
Experience:
Employment  

Jul. 2010 -   Present 

Professor

Platform for Characterization & Test, SINANO, CAS 

Apr. 2010-  Jul.2010 

Researcher 

Department of Electrical and Electronic Engineering, 

Faculty of Engineering, Mie University, Japan

Nov. 2006-  Mar.2010

Researcher

Research Center for Nano-Device and System, 

Nagoya Institute of Technology, Nagoya, Japan

Nov. 2001- July 2004 

Postdoctoral Research Fellow 

Department of Electrical Engineering, 

Israel Institute of Technology, Technion, Haifa, Israel

Education

Ph.D. 2005 

Microelectronics and Solid-State Electronics

Institute of Semiconductors, CAS

M.S. 2001

Condensed Matter Physics

Peking University 

B.S. 1997 

Physics

Qufu Normal University

 
Selected Publication:
  1. J. C. Zhang, Y. Sakai, T. Egawa, “Study on the Electron Overflow in AlGaN Deep Ultraviolet Light-Emitting Diodes”, IEEE J. Quantum Electron 46,1854 (2010).
  2. J. C. Zhang, Y. Sakai, T. Egawa, “Low-temperature electroluminescence quenching of AlGaN deep ultraviolet light-emitting diodes”, Appl. Phys. Lett. 96, 013503 (2010).
  3. Y. H. Zhu, J. C. Zhang, Z. T. Chen, and T. Egawa, “Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)”, J. Appl. Phys. 106, 124506 (2009).
  4. Z. T. Chen, Y. Sakai, J. C. Zhang, T. Egawa, J. J. Wu, H. Hiyake, and K. Hiramatsu “Effect of strain on quantum efficiency of InAlN-based sloar-blind photodiodes” Appl. Phys. Lett. 95, 083504 (2009).
  5. J. C. Zhang, Y. H. Zhu, and T. Egawa, S. Sumiya, M. Miyoshi, and M. Tanaka, “Suppression of the subband parasitic peak by 1 nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes” Appl. Phys. Lett. 93,131117 (2008).
  6. J. C. Zhang, Y. H. Zhu, and T. Egawa, S. Sumiya, M. Miyoshi, and M. Tanaka, “Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes” Appl. Phys. Lett. 92, 191917 (2008).
  7. J. C. Zhang, B. Meyler, A. Vardi, G. Bahir, and J. Salzman, “Stranski–Krastanov growth of GaN quantum dots on AlN template by metalorganic chemical vapor deposition” J. App. Phys. 104, 044307 (2008)
  8. J. C. Zhang, Y. H. Zhu, and T. Egawa, S. Sumiya, M. Miyoshi, and M. Tanaka, “Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emitting diodes” Appl. Phys. Lett. 91, 221906 (2007).
  9. Q. Sun, J. C. Zhang, Y. Huang, J. Chen, J. F. Wang, H. Wang, D. Y. Li, Y. T. Wang, S. M. Zhang and H. Yang. “Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells” Applied Surface Science 252, 3043 (2006)
  10. J. C. Zhang, D. S. Jiang, Q. Sun, J. F. Wang, Y. T. Wang, J. P. Liu, J. Chen, R. Q. Jin, J. J. Zhu, H. Yang, T. Dai, and Q. J. Jia, “Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells” Appl. Phys. Lett. 87, 071908 (2005).