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  LIU Jianping  刘建平
  Division of Nano-devices & Materials
  MOCVD growth; GaN based LEDs, LDs and HEMTs

Research Interest:
  1. Nitride semiconductor materials and devices;
  2. Epitaxial growth by metalorganic chemical vapor deposition(MOCVD)


May. 2010 -Present 


Suzhou Institute of Nano-tech and Nano-bionics, CAS


Postdoctoral Fellow 

School of electrical and computer engineeringGeorgia Institute of Technology 

Jun. 2004-Sep. 2006 

Research Associate 

Beijing University of Technology  


Ph.D. 2004 

Microelectronics and Solid-state electronics

Institute of Semiconductors, CAS 

M.S. 2001 

Materials Science and Engineering

Wuhan University of Technology 

B.S. 1998 

Materials Science and Engineering 

Wuhan University of Technology 

Selected Publication:
  1. J. P. Liu, Y. Zhang, Zachary Lochner, Seong-Soo Kim, Hyunsoo Kim, Jae-Hyun Ryou, Shyh-Chiang Shen, P. Doug Yoder, Russell D. Dupuis, Qiyuan.Wei, Kewei Sun, Alec M. Fischer, Fernando A. Ponce, “Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition”, J. Crystal Growth 315, 272 (2011).
  2. Yun Zhang, Tsung-Ting Kao, Jianping Liu, Zachary Lochner, Seong-Soo Kim, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen, “Effects of a step-graded AlxGa12xN electron blocking layer in InGaN-based laser diodes”, J.Appl. Phys 109, 083115 (2011)
  3. J. P. Liu, J. -H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, H. B. Wang, ”Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes”, Appl. Phys. Lett. 92, 021102 (2008).
  4. J. P. Liu, J. B. Limb, J. -H. Ryou, D. Yoo, C. A. Horne, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce, A. D. Hanser, L. Liu, E. A. Preble, and K. R. Evans, “Blue light-emitting diodes grown on free-standing a-plane GaN substrates”, Appl. Phys. Lett. 92, 011123 (2008).
  5. J. P. Liu, J. -H. Ryou, D. Yoo, Y. Zhang, J. Limb, C. A. Horne, S-C. Shen, R. D. Dupuis, D. Hanser, E. Preble, and K. Evans, “III-nitride heterostructure field effect transistors grown on semi-insulating GaN substrate without interface charge”, Appl. Phys. Lett. 92, 133513 (2008).
  6. J. P. Liu, J. B. Limb, Z. Lochner, D. Yoo, J.-H. Ryou and R. D. Dupuis, Green light-emitting diodes with p-InGaN:Mg grown on c-plane sapphire and GaN substrates, phys. stat. sol. (a) 206, 750-753 (2009)
  7. J. P. Liu, J.-H. Ryou, Z. Lochner, J. B. Limb, D. Yoo, and R. D. Dupuis, Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition, J. Crystal Growth 310, 5166-5169 (2008).
  8. J. P. Liu, G. D. Shen, J. J. Zhu, S. M. Zhang, D. S. Jiang, H. Yang, Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD, J. Crystal. Growth 295, 7(2006).
  9. J. P. Liu, B. S. Zhang, M. Wu, D. B. Li, J. C. Zhang, R. Q. Jin, J. J. Zhu, J. Chen, J. F. Wang, Y. T. Wang, H. Yang. “Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows”, J. Crystal. Growth 260, 388 (2004).
  10. J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, P. K. Ploog. “Investigations on V-defects in quaternary AlInGaN epilayers”, Appl. Phys. Lett.84, 5449(2004).