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Name: |
LIU Jianping 刘建平 |
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Department: |
Division of Nano-devices & Materials |
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Position: |
Professor |
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Expertise: |
MOCVD growth; GaN based LEDs, LDs and HEMTs |
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Email: |
jpliu2010@sinano.ac.cn |
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| Research Interest: |
- Nitride semiconductor materials and devices;
- Epitaxial growth by metalorganic chemical vapor deposition（MOCVD）
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| Experience: |
Employment | May. 2010 -Present | Professor | Suzhou Institute of Nano-tech and Nano-bionics, CAS
| | Oct.2006-Apr.2010 | Postdoctoral Fellow | School of electrical and computer engineering, Georgia Institute of Technology | | Jun. 2004-Sep. 2006 | Research Associate | Beijing University of Technology | Education | Ph.D. 2004 | Microelectronics and Solid-state electronics | Institute of Semiconductors, CAS | | M.S. 2001 | Materials Science and Engineering | Wuhan University of Technology | | B.S. 1998 | Materials Science and Engineering | Wuhan University of Technology | |
| Selected Publication: |
- J. P. Liu, Y. Zhang, Zachary Lochner, Seong-Soo Kim, Hyunsoo Kim, Jae-Hyun Ryou, Shyh-Chiang Shen, P. Doug Yoder, Russell D. Dupuis, Qiyuan.Wei, Kewei Sun, Alec M. Fischer, Fernando A. Ponce, “Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition”, J. Crystal Growth 315, 272 (2011).
- Yun Zhang, Tsung-Ting Kao, Jianping Liu, Zachary Lochner, Seong-Soo Kim, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen, “Effects of a step-graded AlxGa12xN electron blocking layer in InGaN-based laser diodes”, J.Appl. Phys 109, 083115 (2011)
- J. P. Liu, J. -H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, H. B. Wang, ”Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes”, Appl. Phys. Lett. 92, 021102 (2008).
- J. P. Liu, J. B. Limb, J. -H. Ryou, D. Yoo, C. A. Horne, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce, A. D. Hanser, L. Liu, E. A. Preble, and K. R. Evans, “Blue light-emitting diodes grown on free-standing a-plane GaN substrates”, Appl. Phys. Lett. 92, 011123 (2008).
- J. P. Liu, J. -H. Ryou, D. Yoo, Y. Zhang, J. Limb, C. A. Horne, S-C. Shen, R. D. Dupuis, D. Hanser, E. Preble, and K. Evans, “III-nitride heterostructure field effect transistors grown on semi-insulating GaN substrate without interface charge”, Appl. Phys. Lett. 92, 133513 (2008).
- J. P. Liu, J. B. Limb, Z. Lochner, D. Yoo, J.-H. Ryou and R. D. Dupuis, Green light-emitting diodes with p-InGaN:Mg grown on c-plane sapphire and GaN substrates, phys. stat. sol. (a) 206, 750-753 (2009)
- J. P. Liu, J.-H. Ryou, Z. Lochner, J. B. Limb, D. Yoo, and R. D. Dupuis, Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition, J. Crystal Growth 310, 5166-5169 (2008).
- J. P. Liu, G. D. Shen, J. J. Zhu, S. M. Zhang, D. S. Jiang, H. Yang, Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD, J. Crystal. Growth 295, 7(2006).
- J. P. Liu, B. S. Zhang, M. Wu, D. B. Li, J. C. Zhang, R. Q. Jin, J. J. Zhu, J. Chen, J. F. Wang, Y. T. Wang, H. Yang. “Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows”, J. Crystal. Growth 260, 388 (2004).
- J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, P. K. Ploog. “Investigations on V-defects in quaternary AlInGaN epilayers”, Appl. Phys. Lett.84, 5449(2004).
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