|
Name: |
LIU Hongyue 刘虹越 |
Department: |
Division of Interdisciplinary Research |
Position: |
Professor |
Expertise: |
Semiconductor memory design; Mixed-signal circuit design; Optimization of storage systems engineering; Technology integration; Semiconductor device physics |
Email: |
hyliu2010@sinano.ac.cn |
|
|
Research Interest: |
1. Development of core FTL algorithms in solid state storage controller;
2. Development of PCIe based solid state drive with high I/O speed and large capacity;
3. Management of solid state drives in tiered storage system;
4. Mechanism of using solid state storage as cache in High Performance Computing. |
Experience: |
Employment
Jan. 2012 - Present |
Professor |
Division of Interdisciplinary Research, SINANO, CAS |
Apr. 2010 – Dec. 2011 |
Professor |
Division of Nanodevices & Materials, SINANO, CAS |
Jan. 2007 - Mar. 2010 |
Senior Director |
Seagate |
Mar. 2003 - Jun. 1999 |
Senior Device Engineer |
Honeywell |
Education
Ph.D. 1996 |
Materials |
The Pennsylvania State University |
B.S. 1991 |
Applied Physics |
Tsinghua University | |
Selected Publication: |
-
Liu Hongyue, "STRAM for Embedded and Stand-alone Applications”, Invited Presentation, Spring MRS Conference in San Francisco, 2009
-
Liu Hongyue, "Tomorrow for Magnetism”, Invited Presentation, The International Symposium on Low Power Electronics and Design (ISLPED), 2007
-
Y. Chen, X. Wang, H. Li, H. Liu, D. Dimitrov, "Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM)“, the ISQED 2008 best paper
-
X. Wang, Y. Chen, H. Li, D. Dimitrov, H. Liu, "Spin Torque Random Access Memory Down to 22nm Technology”, Magnetics IEEE Trans., Vol. 44, Issue 11, Part 1, Nov. 2008, Pages 2479-2482
-
S.T. Liu, A. Hurst, H. Liu, H. Hughes, M. Mendicino, R. Reed, "SEU Cross-sections of 6T SOI CMOS SRAMs”, 2008 IEEE SOI International Conference Proceedings, Pages 131-132
-
S.T. Liu, D. Nelson, J. Tsang, K. Golke, P. Fechner, W. Heikkila, N. Brewster, R. Van Cleave, H. Liu, P. McMarr, H. Hughes, J. Ziegler, "The Effect of Active Delay Element Resistance on Limiting Heavy Ion SEU Upset Cross-sections of SOI ADE/SRAMs”, IEEE Trans. Nucl. Sci., Vol. 54, Issue 6, Part1, Dec. 2007, pages 2480-2487
-
H. Liu, S.T. Liu and H. Hughes, "Proton Induced SEU Single Event Upset in 6T SRAMs”, IEEE Trans. Nucl. Sci., Vol. 53, Issue 6, Part1, Dec. 2006, pages 3502-3505
-
"A New Mechanism of Heavy Ion Induced Upset in SOI SRAMs”, H. Liu, S.T. Liu, H. L. Hughes, 2006 IEEE SOI International Conference Proceedings, Pages 107-108
-
S.T. Liu, H. Liu, N. Brewster, D. Nelson, K. Golke, G. Kirchner, H. Hughes, A. Campbell, J. Ziegler, "Limiting SEU Cross-sections of Deep Submicron SOI SRAMs”, , IEEE Trans. Nucl. Sci., Vol. 53, Issue 6, Part1, Dec. 2006, pages 3487-3493
-
S. T. Liu, H. Liu, D. Nelson, H. Hughes, "Estimating Proton Induced SEU Cross-sections of SOI CMOS SRAMs”, Meet. Abstr.-Electrochem. Soc. 501, Page 541 (2006)
-
S.T. Liu, H. Liu, E. Vogt, H. Hughes, P. McMarr, and A. Thompson, "Thermal Neutron Induced Upsets in SEU hardened SOI SRAMs”, presented at the 2006 Single Event Effects Symposium.
-
H. Liu, D. Nelson, K. Golke, and S. Liu, "SEU Hardened 0.15m SOI SRAMs”, presented at 2005 Hardened Electronics and Radiation Technology Conference.
-
H. Liu, K. Golke, S. T. Liu, "A New Dose Rate Model for SOI MOSFETs and Its Implementation in SPICE”, 2005 IEEE SOI International Conference Proceedings, Pages 112-113
-
D. Nelson, H. Liu, K. Golke, A. Kohli, "150nm SOI Embedded STRAMs with Very Low SER”, 2005 IEEE SOI International Conference Proceedings, Pages 188-190
-
S. T. Liu, H. Liu, W. Heikkila, H. Hughes, A. Campbell, E. Petersen, P. McMarr, "Proton-induced Upset in SOI CMOS SRAMs”, IEEE Trans. Nucl. Sci., Vol. 51, Issue 6, Part2, Dec. 2004, pages 3475-3479
-
D. Fulkerson, and H. Liu, "A Charge-control SPICE Engineering Model for the Parasitic Bipolar Transistor Action in SOI CMOS Single-Event Upsets”, Feb., IEEE Trans. Nucl. Sci.,Vol. 51, Issue 1, part 2, Feb. 2004, pages 275-287
-
S. T. Liu, H. Liu, "The SEU Performance of an SOI 4M SRAM with Enriched 11B in BPSG”, presented at the 2004 Hardened Electronics and Radiation Technology Conference
-
S. T. Liu, H. Liu, "Neutron-Insensitive SOI CMOS 4M SRAMs”, presented at 2004 Single Event Effects Symposium.
-
H. Liu, S.T. Liu, K.W. Golke, D.K. Nelson, W.W. Heikkila, W.C. Jenkins, "Pronton Induced Single Event Upset in a 4M SOI SRAM”, 2003 IEEE SOI International Conference Proceedings, Pages 26-27
-
H. Liu, et al., "Study of Crystal Precipitates on Borophosphosilicate Glass Films after Reflow”, presented at the 193rd ECS conference.
-
R. Katti, A. Arrot, J. Drewes, W. Larson, H. Liu, Y. Lu, T. Vogt, T. Zhu, "Submicron Pseudo-spin Valve Performance for Giant Magnetoresistive Random Access Memory Applications”, Magnetics IEEE Trans., Vol. 37, Issue 4, Part 1, July 2001, Pages 1967-1969 |
|