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Name: |
YANG Hui 杨辉 |
Department: |
Division of Nano-devices & Materials |
Position: |
Professor |
Expertise: |
MBE and MOCVD growth; GaN based LED and LD; III-V solar cells; |
Email: |
hyang2006@sinano.ac.cn |
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Research Interest: |
1. Semiconductor Optical-electronic devices;
2. GaN based device;
3. Semiconductor Physics;
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Experience: |
Employment
2006 -Present
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Director
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Suzhou Institute of Nano-tech and Nano-bionics, CAS
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2002 -2006
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Deputy director
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Institute of Semiconductors, CAS
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1996 -2002
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Professor
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Institute of Semiconductors, CAS
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1993 -1996
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Post-doctoral Researcher &
Visiting Scientist
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Paul-Drude-Institute for solid state electronics, Berlin, Germany
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1990 -1992
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Associate Professor &
Research Associate
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Institute of Semiconductors, CAS
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1987 -1990
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Research Associate
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Institute of Semiconductors, CAS
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1985 -1987
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Research Assistant
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Institute of Semiconductors, CAS
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Education
Ph.D. 1991
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Semiconductor Physics
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Institute of Semiconductors, CAS
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M.S. 1985
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Semiconductor Physics
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Institute of Semiconductors, CAS
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B.S. 1982
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Vacuum Electrics
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Peking University
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Selected Publication: |
- J. H. Zhu, L. J. Wang, S. M. Zhang, H. Wang, D. G. Zhao, J. J. Zhu, Z. S. Liu, D. S. Jiang, and H. Yang, “The fabrication of GaN-based nanopillar light-emitting diodes”, Journal of Applied Physics, 108, 074302 (2010)
- Qian Sun, Jianfeng Wang, Hui Wang, Ruiqin Jin, Desheng Jiang, Jianjun Zhu, Degang Zhao, Hui Yang, Shengqiang Zhou, Mingfang Wu, Dries Smeets, and Andre Vantomme, “High-temperature AlN interlayer for crack-free AlGaN growth on GaN”, J. Appl. Phys. 104, 043516 (2008)
- L. Q. Zhang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, Y. T. Wang, S. M. Zhang, and H. Yang, “Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green”, Journal of Applied Physics, 105, 023104 (2009)
- W. Liu, J. F. Wang, J. J. Zhu, D. S. Jiang, and H. Yang “Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)” Applied Physics Letters, 90, 011914 (2007)
- H. Wang, Y. Huang, Q. Sun, J. Chen, L. L. Wang, J. J. Zhu, D. G. Zhao, S. M. Zhang, D. S. Jiang, Y. T. Wang, and H. Yang “Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition” Applied Physics Letters, 89, 092114, 2006
- J. C. Zhang, D. S. Jiang, Q. Sun, J. F. Wang, Y. T. Wang, J. P. Liu, J. Chen, R. Q. Jin, J. J. Zhu, and H. Yang “Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells” Applied.physics letters 87, 07 1908 2005
- J. P. Liu, Y. T. Wang, and H. Yang “Investigations on V-defects in quaternary AlInGaN epilayers” Appl. Phys. Lett., Vol. 84, No. 26, 28 June 2004
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