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Name: |
Xu Ke 徐科 |
Department: |
Platform for Characterization & Test |
Position: |
Professor |
Expertise: |
Semiconductor and device physics |
Email: |
kxu2006@sinano.ac.cn |
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Research Interest: |
1. III-nitride semiconductors and related devices
2. Characterizations of novel materials and low-dimensional structures,
3. Theories and equipments for nano-characterization.
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Experience: |
Employment
Oct. 2006 - Present
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Professor,
Director of Platform for Characterization & Test
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SINANO, CAS, China
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Jan. 2004 - Sep. 2006
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Associate Professor
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School of Physics, Peking university, China
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Dec. 2002 - Dec. 2003
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Researcher
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CREST-JST, Japan
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Nov.1999 - Nov.2002
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Postdoctoral researcher
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Center for frontier photonics, Chiba University ,Japan
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Sep.1998 - Oct.1999
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Research Assistant, Associate Professor
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Shanghai Institute of Optics and Fine Mechanics, CAS, China
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Education
Ph.D. 1998
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Materials Science
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Shanghai Institute of Optics and Fine Mechanics, CAS, China
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M.S. 1995
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Material Science
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Department of Material Sciences and Engineering, Xi'an Jiaotong University, China
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B.S. 1992
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Materials Science
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Department of Material Sciences and Engineering, Xi'an Jiaotong University, China
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Selected Publication: |
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Xu K, Yoshikawa A. Effects of film polarities on InN growth by molecular-beam epitaxy. APPLIED PHYSICS LETTERS, 83, 2, 251-253.
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Huang J., Xu K. Dislocation cross-slip in GaN single crystals under nanoindentation. Applied Physics Letters, 98, 22.
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Liu JQ, Wang JF, Gong XJ, Huang J, Xu K, Zhou TF, Zhong HJ, Qiu YX, Cai DM, Ren GQ, Yang H. Structure, stress state and piezoelectric property of GaN nanopyramid arrays. APEX, in press
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Gong XJ, Xu K, Wang JF, Yang H, Bian LF, Zhang JP, Xu ZJ. Growth behavior of GaN film along non-polar [1 1 –2 0] directions. Physica B, 2011, 406, 36–39.
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Jia TT, Zhou SM, Teng H, Lin H, Wang J, Liu JQ, Qiu YX, Huang J, Huang K, Bao F, Xu K. Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD. APPLIED SURFACE SCIENCE, 2010, 257, 4, 1181-1184.
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Shi L, Xu K, Xiong KL, Yang H, Ni J. Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys. JOURNAL OF APPLIED PHYSICS, 2009, 106, 11, 113511
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