People
  CAS Members
  Faculty
  Guest Experts
  Location: Home > Faculty
Name:  
  XU Ke  徐科
Department:  
  Platform for Characterization & Test
Position:  
  Professor
Expertise:  
  Semiconductor and device physics
Email:  
  kxu2006@sinano.ac.cn

Research Interest:
1.?III-nitride?semiconductors?and?related?devices,?

2.?Characterizations?of?novel?materials?and?low-dimensional?structures,

3.?Theories?and?equipments?for?nano-characterization.

 
Experience:

Employment

Oct.?2006?-?Present?

Professor,?

Director?of?Platform?for?Characterization?&?Test

SINANO,?CAS,China?

Jan.?2004-Sep.2006

Associate?Professor?

School?of?physics,?Peking?university,China

Dec.?2002-Dec.?2003

Researcher

CREST-JST,?Japan

Nov.1999-Nov.2002

Postdoctoral?researcher

Center?for?frontier?photonics,?Chiba?University?,Japan

Sep.1998-Oct.1999

Research?assistant,?Associate?professor

Shanghai?Institute?of?Optics?and?Fine?Mechanics,?CAS,?China

Education

Ph.D.?1998

Materials?science

Shanghai?Institute?of?Optics?and?Fine?Mechanics,?CAS,?China

M.S.?1995

Material?science

Department?of?Material?Sciences?and?Engineering,?Xi'an?Jiaotong?University,??China

B.S.?1992

Materials?Science?

Department?of?Material?Sciences?and?Engineering,?Xi'an?Jiaotong?University,??China

 
Selected Publication:
  1. Xu K, Yoshikawa A. Effects of film polarities on InN growth by molecular-beam epitaxy. APPLIED PHYSICS LETTERS, 83, 2, 251-253.
  2. Huang J., Xu K. Dislocation cross-slip in GaN single crystals under nanoindentation. Applied Physics Letters, 98, 22.
  3. Liu JQ, Wang JF, Gong XJ, Huang J, Xu K, Zhou TF, Zhong HJ, Qiu YX, Cai DM, Ren GQ, Yang H. Structure, stress state and piezoelectric property of GaN nanopyramid arrays. APEX, in press
  4. Gong XJ, Xu K, Wang JF, Yang H, Bian LF, Zhang JP, Xu ZJ. Growth behavior of GaN film along non-polar [1 1 –2 0] directions. Physica B, 2011, 406, 36–39.
  5. Jia TT, Zhou SM, Teng H, Lin H, Wang J, Liu JQ, Qiu YX, Huang J, Huang K, Bao F, Xu K. Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD. APPLIED SURFACE SCIENCE, 2010, 257, 4, 1181-1184.
  6. Shi L, Xu K, Xiong KL, Yang H, Ni J. Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys. JOURNAL OF APPLIED PHYSICS, 2009, 106, 11, 113511