CAS Members
  Guest Experts
  Location: Home > Faculty
  DONG Jianrong  董建荣
  Division of Nano-devices & Materials
  Metal-Organic Vapor Phase Epitaxy (MOVPE); Characterization of III-V semiconductor materials; Semiconductor lasers and multijunction solar cells;

Research Interest:
1. MOVPE growth of multiple junction solar cells;

2. Photovoltaic devices design and characterizations;



Jan. 2008 -      Present 


Division of Nano-devices and Materials, SINANO, CAS 

Jul2000 -   Jan.2008 

Research Scientist

Optoelectronics Cluster, Institute of Materials Research and Engineering(IMRE), Singapore

Sept. 1997 - Jul. 2000 

Research Associate

Optoelectronics Cluster, Institute of Materials Research and Engineering(IMRE), Singapore 

Mar. 1996 -   Aug.1997

Research Associate

Institute of Semiconductors, CAS


Ph.D. 1996 

Semiconductor physics and 

semiconductor devices

Institute of Semiconductors, CAS

M.E. 1992

Semiconductor devices and microelectronics

Xidian Univeristy

B.E. 1989

Semiconductor physics and devices

Xidian University

Selected Publication:
  1. K.L. Xiong, S.L. Lu, D.S. Jiang, J.R. Dong, and H. Yang, “Effective Recombination Velocity of Textured Surfaces”, Appl. Phys. Lett. 96(19), 193107 (2010).
  2. C.K. Chia, J R. Dong, B.K. Ng, “Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes”, Appl.  Phys. Lett. 94(5), 053512(2009).
  3. C. K. Chia, J.R. Dong, D.Z. Chi, A. Sridhara, A.S. W.Wong, M. Suryanan, G.K.Dalapati, S.J. Chua, anf S.J. Lee, “Effects of AlAs interfacial layer on material and optical properties of GaAs/Ge (100) epitaxy”, Appl. Phys. Lett. 92(14), 14905 (2008).
  4. J. H. Teng, J. R. Dong, S. J. Chua, B. S. Foo, M. Y. Lai, Y. J. Wang, S. S. Ang, and R. Yin, “Distributed Bragg reflector laser using buried SiO2 grating and self-aligned band gap tuning”, Appl Phys. Lett. 90(17), 171107 (2007).
  5. J.R. Dong, J.H. Teng, S.J. Chua, B.C. Foo, Y.J. Wang, and R. Yin, “MOCVD growth of 980 nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with TBAs” J. Crystal Growth 289, 59(2006).
  6. J.R. Dong, J.H. Teng, S.J. Chua, Y.J. Wang, B.C. Foo, and R. Yin “InGaAsP/GaInP/AlGaInP 0.8 m QW lasers grown by MOCVD using TBP and TBAs” J. Crystal Growth 281, 323(2005).
  7. J.R. Dong, S.J. Chua, Y.J. Wang and H.R. Yuan, “Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD”, J. Crystal Growth 269, 408(2004).
  8. J.R. Dong, J.H. Teng, S.J. Chua, B.C. Foo, Y.J. Wang, L.W. Zhang, H.R.Yuan, and S. Yuan, “Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine”, J. Appl. Phys. 95(9), 5252(2004).
  9. J.R. Dong, J.H. Teng, S.J. Chua, B.C. Foo, Y.J. Wang, H.R. Yuan, and S. Yuan, “650-nm AlGaInP mutiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine”, Appl. Phys. Lett. 83(4), 596(2003).
  10. J.H. Teng, J.R. Dong, S.J. Chua, D.A. Thompson, B.J. Robinson, A.S.W. Lee, John Hazell, and Irwin Sproule “Impurity free intermixing in compressively strained InGaAsP multiple quantum well structures”, Materials Science in Semiconductor Processing, 4, 621(2001).