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  LI Tong  李同
  Division of Nano-devices & Materials
  Integrated optics; Flat Panel Display technology; Optical communications; Thin film based devices

Research Interest:
1. Novel components and modules for flat panel display;

2. Optical components and modules for photovoltaic systems;

3. Thin film devices;

4. Solid state laser.


Jul. 2008 - Present


Division of Nano-Devices and Materials, SINANO, CAS

Apr. 2004 - Jun. 2008

President and CEO

Ningbo Starley Co. Ltd., China

Oct. 2003 - Mar. 2004


LuminTek, U.S.A.

Oct. 2000 - Sep. 2003

Senior Process Engineer

Chorum Technologies, U.S.A.

Sep. 1999 - Sep. 2000

Senior Device Engineer

Ball Semiconductor Inc., U.S.A.

Jul, 1983- Aug. 1990


Shaanxi Institute of Metrology, China


Ph.D. 1999

Electrical Engineering and Computer Sciences

University of Michigan, Ann Arbor, U.S.A.

M.S. 1993

Electrical and Computer Engineering

Wayne State University, U.S.A.

B.S. 1983

Optical Engineering

Shanghai Institute of Mechanical Engineering

Selected Publication:
  1. S. Martin, C.-S. Chiang, J.-Y. Nahm, Tong Li, J. Kanichi, and Y. Ugai, Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances. Japan Journal of Applied Physics (2001), 40, 530-537.
  2. Tong Li, J. Kanicki, W. Kong and F.L. Terry, Interference Fringe-Free Transmission Spectroscopy of Amorphous Thin Films, Journal of Applied Physics (2000), 88, 5764-5771.
  3. Tong Li, and J. Kanicki, Microstructure Characterization of Hydrogenated Amorphous Thin Films in a Fringe-Free Environment, Journal of Applied Physics (1999), 85, 388.
  4. Tong Li, J. Kanicki, and C. Mohler, Method of Collecting Pure Vibrational Absorption Spectra of Amorphous Thin Films, Thin Solid Films (1999), 349, 283.
  5. Tong Li, and J. Kanicki, Observation of Angle Dependent Phonon Absorption in Hydrogenated Amorphous Silicon Nitride Thin Films, Applied Physics Letters (1998), 73, 3866.
  6. Tong Li, and J. Kanicki, Longitudinal Vibrational Absorption Modes of Hydrogenated Amorphous Silicon Nitride Thin Films, Material Research Society Symposium Proceedings (1998), 507, 535.
  7. Tong Li, C. Y. Chen, C. T. Malone, and J. Kanicki, High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Thin-Film Transistor Structures, Material Research Society Symposium Proceedings (1996), 424, 43.
  8. Tong Li, J. Kanicki, M. Fitzner, and W. L. Warren, Investigation of Hydrogen Evolution and Dangling Bonds Creation Mechanism in Amorphous Silicon Nitride Thin Films, AMLCDs ’95 (1995), 123.
  9. R. Arrathoon, J. Arshad, Tong Li, T. W. Lin, and B. Zhang, Optoelectronic Wide-Word Personality ROM’s for High-Speed Control Applications, Hybrid Image and Signal Processing III (1992), David P. Casasent, Andrew G. Tescher, Editors, Proc. SPIE. 1702, 200.