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  Location: Home > Faculty
Name:  
  JIANG Chunping  蒋春萍
Department:  
  Division of Nano-devices & Materials
Position:  
  Professor
Expertise:  
  Terahertz(THz) technology; Superconducting magnet system (spectromag, 3He/4He cryostats,etc); Growth of Magnetic Materials using Molecular Beam Epitaxy
Email:  
  cpjiang2008@sinano.ac.cn

Research Interest:
  1. Low dimensional structures for generating and detecting terahertz radiation;
  2. Physical properties of low-dimensional solids under extreme conditions (ultralow temperature, high magnetic field, terahertz radiation, etc );
  3. Transition metal oxides: synthesis, properties and applications.
 
Experience:
Employment

Jan. 2008- Present 

Professor 

Division of Nanodevice & Materials, SINANO, CAS 

Nov2004 - Jun. 2007

Postdoctoral Research Fellow

Research Scientist

Max-Planck-Institut für Festk?rperforschung,Germany 

Nov. 2002 - Nov. 2004 

Postdoctoral Research Fellow

Institute of Semiconductors, CAS

Education

Ph.D. 2002

Microelectronics and Solid-State Electronics

Shanghai Institute of Technical Physics ,CAS

M.S. 1999

Optics

Suzhou University 

B.S. 1996 

Physics

Suzhou University

 
Selected Publication:
  1. Bo Qian, Kunji Chen, San Chen, Wei Li, Xiangao Zhang, Jun Xu, Xinfan Huang, Lorenzo Pavesi, Chunping Jiang, On-chip silicon-based active photonic molecules by complete photonic bandgap light confinement, Appl. Phys. Lett., accepted
  2. V. M. Muravev, C. Jiang, I. V. Kukushkin, J. Smet, K. von Klitzing, Spectra of magnetoplasma excitations in back-gate-Hall bar structures, Phys. Rev. B. 75, 193307(2007)
  3. J. H. Smet, B. Gorshunov, C. Jiang, L. Pfeiffer, K. West,V. Umanksy, M. Dressel, R. Meisels, F. Kuchar, and K. von Klitzing, Circular-Polarization-Dependent Study of the Microwave Photoconductivity in a Two-Dimensional Electron System, Phys. Rev. Lett. 95, 116804 (2005)
  4. C. P. Jiang, J. H. Zhao, J. J. Deng, F. H.Yang , Z. C. Niu, X. G. Wu and H.Z.Zheng, A convenient way of determining the ferromagnetic transition temperature of metallic (Ga,Mn)As, J. Appl. Phys. 97, 063908 (2005)
  5. C. P. Jiang, F. F.Yang, H.Z.Zheng, Z. J. Qiu, Y. S. Gui, S.L. Guo, J. H. Chu, Magnetointersubband oscillations of conductivity of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures, Chinese Phys. Lett. 20, 915 (2004)
  6. Huang ZM, Yu R, Jiang CP, Lin T, Zhang ZH, Chu JH, Influence of delta doping position on subband properties in In0.2Ga0.8As/GaAs heterostructures, Phys. Rev. B. 62,205312(2002)
  7. Huang ZM, Jiang CP, Zhang ZH, Lin T, Chu JH, Yu R, Subband characteristics of Si delta-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures , J. Appl. Phys. Vol. 90, 3115(2001)
  8. C. P. Jiang, Z. M. Huang, Z. F. Li, J. Yu, S. L. Guo, W. Lu, J. H. Chu, L. J. Cui, Y. P. Zeng, Z. P. Zhu and B. Q. Wang, LO phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs HEMT's on GaAs substrate, Appl. Phys. Lett. 79, 1909 (2001)
  9. C. P. Jiang, S. L. Guo, Z. M. Huang, J. Yu, Y. S. Gui, G. Z. Zheng, J. H. Chu, Z. W. Zheng, B. Shen and Y. D. Zheng, Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thickness, Appl. Phys. Lett. 79, 374 (2001)
  10. C. P. Jiang, Z. M. Huang, S. L. Guo, J. H. Chu, L. J. Cui, Y. P. Zeng, Z. P. Zhu and B. Q. Wang, Subband electron properties of highly doped InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate, Appl. Phys. Lett. 79, 1375 (2001)