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  Location: Home > Faculty
Name:  
   CAI Yong  蔡勇
Department:  
   Nanofabrication Facility
Position:  
   Professor
Expertise:  
   Semiconductor electron devices; Nano-fabrication process;
Email:  
   ycai2008@sinano.ac.cn

Research Interest:
1. GaN HEMT for power & RF application;

2. GaN LED;

 
Experience:
Employment

Dec. 2008 - Present 

Professor, Deupty Director 

Nano-fabrication facilities, SINANO, CAS 

Aug. 2006 -Nov. 2008 

Manager 

Material and Package Division,

HongKong Applied Sciences and Technology Research Institute, Ltd.

Aug. 2003 -July 2006 

Postdoctoral Research Associate 

Department of Electronic and Computer Engineering,

HongKong University of Science and Technology, 

Aug. 1993 -  Aug.1998 

Assistant Engineer 

Nanjing Electronic Devices Institute, Silicon Device Research Centre

Education

Ph.D. 2003 

Microelectronics and Solid-state Electronics 

Peking University 

B.S. 1993 

Semiconductor Physics and Devices 

Southeast University 

 
Selected Publication:
  1. J.N. Lv, Z.C. Yang, G.Z. Yan, Y. Cai, B.S. Zhang, and K.J. Chen, “CHARACTERIZATION OF GAN CANTILEVERS FABRICATED WITHGAN-ON- SILICON PLATFORM”, MEMS 2011, January 23 - 27, 2011, Cancun, Mexico.
  2. Rumin Gong, JinyanWang, Zhihua Dong, Shenghou Liu, Min Yu, Cheng P Wen, Yilong Hao, Bo Shen, Yong Cai, Baoshun Zhang and Jincheng Zhang，” Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs”, JOURNAL OF PHYSICS D: APPLIED PHYSICS, 43 (2010) 395102.
  3. S. Liu, J. Wang, R. Gong, Z. Dong, M. Yu, C. P. Wen, C. Zeng, Y. Cai, B. Zhang, “Enhanced Device Performance of AlGaN/GaN MOSHEMT with Thermal Oxidation”, SSDM2010, Sep.22-24,2010, Tokyo, Japan.
  4. R. N. Wang, Y. Cai, and K. J. Chen, "Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-mode AlGaN/GaN HEMTs and Digital Circuits", Solid State Electronics, 53, pp. 1-6, 2009.
  5. Y, Cai, Z. Cheng, Z. Yang, W. C. -W. Tang, K. M. Lau, and K. J. Chen, "High Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits," IEEE Electron Device Lett., Vol. 28, No. 5, pp. 328-331, May, 2007.
  6. Y. Cai, Y. G. Zhou, K. M. Lau, and K. J. Chen "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based Plasma Treatment: From Depletion Mode to Enhancemend Mode," IEEE Trans. Electron Devices, vol.. 53, No. 9, pp. 2207-2215, Sep. 2006.
  7. Y. Cai, Z. Cheng, W. C. K. Tang, K. M. Lau, and K. J. Chen "Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment," IEEE Trans. Electron Devices, vol.. 53, No. 9, pp. 2223-2230, Sep. 2006.
  8. Y. Cai, Z. Cheng, C. W. Tang, K. J. Chen, and K. M. Lau, "Monolithic Integration of Enhancement- and Depletion-mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits," 2005 International Electron Device Meeting (IEDM 05), Washington D. C., USA, Dec. 4-7, 2005.
  9. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, "High-Performance Enhancement- Mode AlGaN/GaN HEMTs using Fluoride-based Plasma Treatment," IEEE Electron Device Letters, Vol. 26, No. 7, pp. 435-437, 2005.
  10. J. Liu, Y. G. Zhou, R. M. Chu, Y. Cai, K. J. Chen, and K. M. Lau,"Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs with Enhanced Linearity," 2004 International Electron Device Meeting (IEDM 04), San Francisco, USA, Dec. 13-15, 2004.