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  Location: Home > Faculty
Name:  
  BIAN Lifeng  边历峰
Department:  
  Division of Nano-devices & Materials
Position:  
  Professor
Expertise:  
  Semiconductor physics; Optical-electronic devices and material; Optical Characterizaiton
Email:  
  lfbian2006@sinano.ac.cn

Research Interest:
1. Semiconductor Optical-electronic devices;

2. Optical properties of Optical-electronic devices;

3. Optical characterizaiton technology;

 
Experience:
Employment

Jun. 2010 -Present

Professor

Suzhou Institute of nano-tech and nano-bionics, CAS

Apr. 2006 -Jun. 2010

Associate Professor 

Suzhou Institute of nano-tech and nano-bionics, CAS

Apr. 2008 -Sept. 2008

DAAD Visit Scientist

Paul-Drude-Institute for Solid-State Electronics, Berlin, Germany

Jun. 2007 -Dec. 2007

DAAD Visit Scientist

Paul-Drude-Institute for Solid-State Electronics, Berlin, Germany

Oct. 2004 -Mar. 2006

Postdoctoral Research

Paul-Drude-Institute for Solid-State Electronics, Berlin, Germany

Education

Ph.D. 2004

Condensed Matter Physics

Institute of Semiconductors, CAS

M.S. 2001

Applied Physics

Institute of Intelligent machineCAS

B.S. 1998

Applied Physics, microelectronics technology

Hefei University of Technology

 
Selected Publication:
  1. Liaoyong Wen, Zhengzheng Shao, Yaoguo Fang, Kin Mun Wong, Yong Lei, Lifeng Bian and Gerhard Wilde, Selective growth and piezoelectric properties of highly ordered arrays of vertical ZnO nanowires on ultrathin alumina membranes, App.Phy. Lett. 97 (2010) 053106
  2. U. Jahn, O. Brandt, E. Luna, L. F. Bian, H. Yang, Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers, Physics Review B 81 (2010)1253141
  3. Lifeng Bian, Zhao Jin, Optical Transition and carrier relaxation in self assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation, Journal of Shanghai University (English edition), 2010, 14(2): 1–6
  4. Shulong Lu; Hidetaka Nosho, Atsushi Tackeuchi, Lifeng Bian, Jianrong Dong and Zhichuan Niu, Spin-Polarized Localized Exciton Photoluminescence Dynamicsin GaInNAs Quantum Wells, Japanese Journal of Applied Physics 48 (2009) 100206
  5. S. L. Lu, L. F. Bian, et al, Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well, App.Phy. Lett. 92 (2008) 051908-051910
  6. Moon-Ho Ham, Sukho Yoon, Yongjo Park, Lifeng Bian, Manfred Ramsteiner, Holger Grahn, Jaemin Myoung, The electrical injection in nitride-based spin-polarized light emitting diode with   ferromagnetic (Ga,Mn)N layer, Solid State Communications 132 (2006) 707–711.
  7. L.F. Bian, D.S. Jiang, P.H. Tan, S.L. Lu, B.Q. Sun, L.H. Li, J.C. Harmand, Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates, Solid State Communications 132 (2004) 707–711
  8. Lifeng Bian, Desheng Jiang, Xiaogan Liang, Shulong Lu, The temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs QWs, Chinese Physics Letter 21 (2004) 548-551
  9. L.F. Bian, D.S. Jiang, S. L. Lu,J. S. Huang, K. Chang, L. H. Li, J. C. Harmand, The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well Journal of Crystal Growth 250(2003)339-344
  10. L.F. Bian, D.S. Jiang, S. L. Lu, Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells, Journal of Crystal Growth 253 (2003) 155-160