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Name: |
WANG Jianfeng 王建峰 |
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Department: |
Platform for Characterization & Test |
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Position: |
Associate Professor |
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Expertise: |
Semiconductor and device physics |
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Email: |
jfwang2006@sinano.ac.cn |
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| Research Interest: |
1. III-nitride semiconductors and related devices,
2. Surface plasmonics. |
| Experience: |
Employment
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Dec. 2006 - Present
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Associate Professor
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Platform for Characterization & Test, SINANO, CAS
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Education
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Ph.D. 2006
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Optics
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Wuhan University
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B.S. 2001
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Physics
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Wuhan University
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| Selected Publication: |
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K.Xu, J.F.Wang,？ G.Q.Ren, Y.H.Zhang, Y.Xu, Y.M.Zhang, X.J.Hu, D.M.Cai, Y.Zhu, B.S.Zhang, H. Yang, ICNS-8, invited talk, "HVPE Growth of GaN Substrate: toward industry scale mass production ”
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Wang JF, Hu XJ, Zhang YM, Xu Y, Wang HB, Zhang BS, Xu K, Yang H, JOURNAL OF CRYSTAL GROWTH 311 (2009) 3033-3036
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Hui Yang, Jian-feng Wang, “In-situ strain measurement equipment and its applications”, Proceedings of the Summer School on Semiconductor Nanostructures and Optoelectronic Devices，Beijing，China August 3-10, 2005.
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J. F. Wang, D. Z. Yao, J. Chen, J. J. Zhu, D. G. Zhao, D. S. Jiang, H. Yang and J. W. Liang, "Strain evolution in GaN layers grown on high-temperature AlN interlayers", Appl. Phys. Lett. 2006, 89(15) p. 152105.
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WANG Jian-Feng, ZHANG Bao-Shun, ZHANG Ji-Cai, ZHU Jian-Jun, WANG Yu-Tian, CHEN Jun, LIU Wei, JIANG De-Sheng, YAO Duan-Zheng and Y. Hui, “Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer”, Chin. Phys. Lett. 2006, 23(9) p. 2591.
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